NCE Power IGBT Distributor | 600 V Trench FS Lineup
Genuine NCE Power 600 V Trench FS IGBTs from 7 A to over 40 A with a 1.7 V saturation voltage for PFC, supplies, UPS and drives.
NCE Power IGBT Overview
BeiLuo supplies genuine NCE Power IGBTs, the insulated-gate bipolar transistors that combine a MOSFET-like voltage-driven gate with the low saturation voltage of a bipolar device. The NCE TD family uses a Trench Field-Stop structure at 600 V with a typical saturation voltage of 1.7 V at a 15 V gate drive, and it is offered in the TO-220, TO-220F, TO-252, TO-263, TO-3P and TO-247 packages from about 7 A to more than 40 A. The switching frequency range of 1 to 60 kHz and the 5 microsecond short-circuit withstand make the family a fit for power-factor correction, switch-mode power supplies, UPS, induction heating, welding and motor-drive inverters, where a low on-state voltage at moderate frequency keeps conduction loss small. The IGBT turns on with a simple gate drive but conducts efficiently at high current, which is why it remains the default switch for medium-frequency, high-power conversion. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you match the voltage class, current and saturation voltage to your converter, then confirm the gate drive and thermal path. Selecting an IGBT means fixing the voltage class from the DC bus, sizing current for the worst-case load, and verifying the thermal path before layout sign-off.
NCE Power IGBT Product Range
In-stock IGBT series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.
| Model | VCES (V) | IC (A) | VCE(sat) typ (V) | Package | Switching |
|---|---|---|---|---|---|
| NCE20TD60BT | 600 V | 20 A | 1.7 | TO-247 | 1-60 kHz |
| NCE15TD60BD | 600 V | 15 A | 1.7 | TO-263 | 1-60 kHz |
Frequently Asked Questions
How do I read the NCE Power IGBT table?
Fix the voltage class from your DC bus in the VCES column, use IC for continuous current and VCE(sat) for conduction loss, and read the Package and Switching columns to confirm the mechanical fit and the frequency range.
Lower saturation voltage means lower conduction loss.
When do I choose an IGBT over a MOSFET?
Choose an IGBT for high-voltage, high-current switching where its low saturation voltage wins on conduction loss at moderate frequency. Choose a Super Junction MOSFET for higher-frequency switching where switching loss dominates.
Both are available in the same packages for easy comparison.
How do I drive the IGBT?
An IGBT has a MOS gate, so it is driven with a gate voltage like a MOSFET, but the gate resistor and dead time must be set for the switching speed. Keep the gate loop short and verify turn-off overshoot at the device terminals.
Read the IGBT and MOSFET selection guide.
How do I plan the thermal design?
Begin from RthJC in the datasheet, add interface and heatsink resistance, and verify junction temperature at worst-case current. The through-hole packages mount with a standard clip or screw.
Request a thermal review for your heatsink.
Documentation
Need a quote or samples?
Request pricing, samples or technical consultation for NCE Power IGBT products. Our FAE team responds within one business day.
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